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  this is information on a product in full production. june 2012 doc id 15642 rev 5 1/23 23 stb26nm60n, stf26nm60n, STI26NM60N stp26nm60n, stw26nm60n n-channel 600 v, 0.135 typ., 20 a mdmesh? ii power mosfet in d 2 pak, i 2 pak, to-220, to-220fp and to-247 packages datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet applies a new vertical structure to the company?s strip layout to yield a device with one of the world?s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. figure 1. internal schematic diagram type v dss r ds(on) max i d stb26nm60n 600 v < 0.165 20 a stf26nm60n 600 v < 0.165 20 a STI26NM60N 600 v < 0.165 20 a stp26nm60n 600 v < 0.165 20 a stw26nm60n 600 v < 0.165 20 a to-220 to-220fp to-247 1 2 3 1 2 3 d2pak i2pak 1 2 3 tab 1 2 3 tab 1 3 tab 3# $4!"  ' 3 table 1. device summary order codes marking package packaging stb26nm60n 26nm60n d2pak tape and reel stf26nm60n to-220fp tu b e STI26NM60N i2pak stp26nm60n to-220 stw26nm60n to-247 www.st.com
contents stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 2/23 doc id 15642 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n electrical ratings doc id 15642 rev 5 3/23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak, i2pak, to-220, to-247 to-220fp v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 20 20 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 12.6 12.6 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 80 80 (1) a p tot total dissipation at t c = 25 c 140 35 w derating factor 1.12 0.28 w/c dv/dt (3) 3. i sd 20 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-247 to-220 i2pak d2pak to-220fp r thj-case thermal resistance junction- case max 0.89 3.6 c/w r thj-amb thermal resistance junction- ambient max 50 62.5 62.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec. thermal resistance junction-pcb max 30 c/w
electrical ratings stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 4/23 doc id 15642 rev 5 table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 6a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 610 mj
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n electrical characteristics doc id 15642 rev 5 5/23 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 10 a 0.135 0.165 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1800 115 1.1 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 310 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 20 a, v gs = 10 v, (see figure 19) - 60 8.5 30 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -2.8 - table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 300 v, i d = 10 a r g =4.7 v gs = 10 v (see figure 18) - 13 25 85 50 - ns ns ns ns
electrical characteristics stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 6/23 doc id 15642 rev 5 table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 20 80 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 20 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100 a/s v dd = 60 v (see figure 20) - 370 5.8 31.6 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 20) - 450 7.5 32.5 ns c a
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n electrical characteristics doc id 15642 rev 5 7/23 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, d2pak and i2pak figure 3. thermal impedance for to-220, d2pak and i2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s 1 s tj=150c tc=25c s inlge p u l s e am0 33 14v1 i d 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 10 am0 33 15v1 i d 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 10 am0 33 16v1
electrical characteristics stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 8/23 doc id 15642 rev 5 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on-resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations g f s 6.5 4.5 2.5 0.5 0 10 i d (a) ( s ) 5 20 8 .5 15 t j =150c t j =25c t j =-50c am0 33 1 8 v1 r d s (on) 0.1 3 0.12 0.11 0.1 0 10 i d (a) ( ) 5 15 0.14 0.15 0.16 v g s =10v 20 am0 33 17v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d =20a 50 12 60 am0 33 20v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am0 33 19v1
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n electrical characteristics doc id 15642 rev 5 9/23 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature v g s (th) 1.0 0.9 0. 8 0.7 -50 0 t j (c) (norm) -25 1.1 75 25 50 100 i d = 250 a am0 33 21v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 v g s = 10 v am0 33 22v1 v s d 0 i s d (a) (v) 5 10 15 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am0 33 24v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1
test circuits stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 10/23 doc id 15642 rev 5 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n package mechanical data doc id 15642 rev 5 11/23 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 12/23 doc id 15642 rev 5 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n package mechanical data doc id 15642 rev 5 13/23 figure 24. d2pak (to-263) drawing figure 25. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
package mechanical data stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 14/23 doc id 15642 rev 5 table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n package mechanical data doc id 15642 rev 5 15/23 figure 26. i2pak (to-262) drawing 00049 8 2_rev_h
package mechanical data stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 16/23 doc id 15642 rev 5 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n package mechanical data doc id 15642 rev 5 17/23 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 18/23 doc id 15642 rev 5 table 12. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n package mechanical data doc id 15642 rev 5 19/23 figure 28. to-220fp drawing 7012510_rev_k_b
packaging mechanical data stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, 20/23 doc id 15642 rev 5 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n packaging mechanical doc id 15642 rev 5 21/23 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n 22/23 doc id 15642 rev 5 6 revision history table 14. document revision history date revision changes 29-apr-2009 1 first release 17-dec-2009 2 added new package, mechanical data: d2pak 20-jun-2011 3 inserted device in i 2 pak. 13-mar-2012 4 updated p tot and derating factor in ta bl e 2 . update r thj-case for to-220fp in ta bl e 3 . update figure 12 and figure 17 . update section 5: packaging mechanical data . 20-jun-2012 5 updated title on the coverpage. minor text changes.
stb26nm60n, stf26nm60, STI26NM60N, stp26nm60n, stw26nm60n doc id 15642 rev 5 23/23 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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